Implantation damage in GaAs-AlAs superlattices of different layer thickness

Journal Article · Mon Sep 09 00:00:00 EDT 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.105493· OSTI ID:5218539

Dobisz, E A; Fatemi, M; Dietrich, H B ^[1]; McCormick, A W ^[2]; Harbison, J P ^[3]

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1. Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC (USA)
2. Universal Energy Systems, 4401 Dayton-Xenia Road, Dayton, Ohio (USA)
3. Bellcore, 331 Newman Springs Road, Red Bank, New Jersey (USA)

We report that two GaAs-AlAs superlattices of different layer thickness show dramatically different crystal damage when ion irradiated under identical conditions. The samples, held at 77 K, were implanted with 100 keV {sup 28}Si at doses of 3{times}10{sup 13} cm{sup {minus}2} to 1{times}10{sup 15} cm{sup {minus}2}. Ion channeling results show amorphization threshold doses of 1{times}10{sup 15} cm{sup {minus}2} for the 7.0 nm GaAs-8.5 nm AlAs superlattice and 4{times}10{sup 14} cm{sup {minus}2} for the 3.5 nm GaAs-5.0 nm AlAs superlattice. At low doses, the shorter period superlattice was more robust, with no damage peak observed in ion channeling spectra for doses as high as 1{times}10{sup 14} cm{sup {minus}2}. For a dose of 7{times}10{sup 13} cm{sup {minus}2}, double crystal x-ray diffraction measurements show a 6 arcsec broadening of the (004) peak, relative to that of the unimplanted sample, for both superlattices. However, only the finer period superlattice exhibits a broadening (10 arcsec) of the (224) diffracted peak indicating a distortion in an additional direction. A mechanism involving the formation of slightly misaligned crystal domains is suggested to describe the behavior of the finer period superlattice.

• OSTI ID: 5218539
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:11; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHANNELING
DAMAGE
ENERGY RANGE
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION BEAMS
ION CHANNELING
ION IMPLANTATION
KEV RANGE
KEV RANGE 10-100
MOLECULAR BEAM EPITAXY
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SILICON 28 BEAMS
SUPERLATTICES