Implantation damage in GaAs-AlAs superlattices of different layer thickness

Journal Article · Mon Sep 09 00:00:00 EDT 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.105493· OSTI ID:5218539

Dobisz, E A; Fatemi, M; Dietrich, H B ^[1]; McCormick, A W ^[2]; Harbison, J P ^[3]

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1. Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC (USA)
2. Universal Energy Systems, 4401 Dayton-Xenia Road, Dayton, Ohio (USA)
3. Bellcore, 331 Newman Springs Road, Red Bank, New Jersey (USA)

We report that two GaAs-AlAs superlattices of different layer thickness show dramatically different crystal damage when ion irradiated under identical conditions. The samples, held at 77 K, were implanted with 100 keV {sup 28}Si at doses of 3{times}10{sup 13} cm{sup {minus}2} to 1{times}10{sup 15} cm{sup {minus}2}. Ion channeling results show amorphization threshold doses of 1{times}10{sup 15} cm{sup {minus}2} for the 7.0 nm GaAs-8.5 nm AlAs superlattice and 4{times}10{sup 14} cm{sup {minus}2} for the 3.5 nm GaAs-5.0 nm AlAs superlattice. At low doses, the shorter period superlattice was more robust, with no damage peak observed in ion channeling spectra for doses as high as 1{times}10{sup 14} cm{sup {minus}2}. For a dose of 7{times}10{sup 13} cm{sup {minus}2}, double crystal x-ray diffraction measurements show a 6 arcsec broadening of the (004) peak, relative to that of the unimplanted sample, for both superlattices. However, only the finer period superlattice exhibits a broadening (10 arcsec) of the (224) diffracted peak indicating a distortion in an additional direction. A mechanism involving the formation of slightly misaligned crystal domains is suggested to describe the behavior of the finer period superlattice.

• OSTI ID: 5218539
• Journal Information: Applied Physics Letters; (United States), Vol. 59:11; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
GALLIUM ARSENIDES
SUPERLATTICES
ANNEALING
DAMAGE
ION CHANNELING
KEV RANGE 10-100
MOLECULAR BEAM EPITAXY
SILICON 28 BEAMS
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHANNELING
ENERGY RANGE
EPITAXY
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION BEAMS
KEV RANGE
PNICTIDES
RADIATION EFFECTS
656003* - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)