Disordering of AlAs-GaAs superlattices by Si and S implantation at different implant temperatures

Journal Article · Sun Dec 14 23:00:00 EST 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.337497· OSTI ID:7240681

Dobisz, E A; Tell, B; Craighead, H G; Tamargo, M C

We have investigated by transmission electron microscopy the enhanced disordering of GaAs-AlAs superlattices due to Si and S implantation with subsquent annealing. The implants were performed at 77 K, room temperature, and 210 /sup 0/C at a dose of 2.5 x 10/sup 14/ cm/sup -2/ with energy of 100 keV. The greatest enhancement occurs, after annealing, for Si implants performed at 77 K. We find no enhancement due to S implants. The apparent damage due to implantation prior to annealing is strikingly less for superlattices compared with bulk GaAs.

• Research Organization: Bell Communications Research, Red Bank, New Jersey 07701-7020
• OSTI ID: 7240681
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 60:12; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
MICROSCOPY
MIXING
NONMETALS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMIMETALS
SILICON
SULFUR
SUPERLATTICES
TRANSMISSION ELECTRON MICROSCOPY