Damage calculation and measurement for GaAs amorphized by Si implantation

Journal Article · Mon Oct 13 00:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97500· OSTI ID:5190403

Opyd, W G; Gibbons, J F; Bravman, J C; Parker, M A

Extended defects in GaAs are investigated following epitaxial regrowth of amorphous layers. GaAs surface layers were amorphized by Si/sup +/ implants at liquid-nitrogen temperature. Anneals were performed for 4 s to 30 min from 150 to 885 /sup 0/C. Rutherford backscattering spectrometry and transmission electron microscopy were used to evaluate the results of annealing. Complete solid-state epitaxy occurs rapidly at low temperature. Stacking faults and microtwins surrounded by dislocation networks extend to the surface following regrowth. The dislocations anneal at varying rates over intermediate temperature ranges (200-700 /sup 0/C), and the microtwins climb out at higher temperatures (>700 /sup 0/C). Defect depth profiles are correlated with damage and stoichiometric imbalances computed by the Boltzmann transport equation approach to ion-implant modeling.

• Research Organization: Lockheed Research and Development Division, Palo Alto, California 94304
• OSTI ID: 5190403
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:15; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
DISLOCATIONS
ELECTRON MICROSCOPY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
HIGH TEMPERATURE
ION IMPLANTATION
IONS
LINE DEFECTS
MEDIUM TEMPERATURE
MICROSCOPY
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SILICON IONS
TRANSMISSION ELECTRON MICROSCOPY