Compensating impurity effect on epitaxial regrowth rate of amorphized Si

Journal Article · Mon Feb 01 04:00:00 EST 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93034· OSTI ID:5591173

Suni, I; Goeltz, G; Grimaldi, M G; Nicolet, M; Lau, S S

The epitaxial regrowth of ion-implanted amorphous layers on <100> Si with partly compensated doping profiles of /sup 11/B, /sup 75/As, and /sup 31/P was studied. Single implants of these impurities are found to increase the regrowth rate at 475 and 500 /sup 0/C. The compensated layers with equal concentrations of /sup 11/B and /sup 31/P or /sup 11/B and /sup 75/As show a strong decrease of the regrowth whereas for the layers with overlapping /sup 75/As and /sup 31/P profiles no compensation has been found.

• Research Organization: California Institute of Technology, Pasadena, California 91125
• OSTI ID: 5591173
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation &amp; Manufacture
AMORPHOUS STATE
ARSENIC IONS
BORON IONS
CHARGED PARTICLES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
DISTRIBUTION
ELEMENTS
EPITAXY
HIGH TEMPERATURE
IMPURITIES
ION IMPLANTATION
IONS
ORIENTATION
QUANTITY RATIO
RECRYSTALLIZATION
SEMIMETALS
SILICON
SPATIAL DISTRIBUTION