Determination of amorphous layer thickness in ion-implanted silicon using secondary ion-mass spectrometry. Technical report
Technical Report
·
OSTI ID:6045359
Secondary ion mass spectrometry was used to study boron-doped Si (100) that was rendered amorphous by the implantation of /sup 75/As. Using oxygen bombardment and negative secondary ion detection, all secondary ion species show a shift in ion energy of greater than 2 eV upon sputtering through the amorphous layer and into the underlying crystalline silicon. After regrowth of the same specimens by rapid thermal annealing, the secondary-ion energy shift occurs significantly deeper, at approximately the p-n junction. In both specimens, the energy shift was shown to be due to bombardment-induced specimen charging. Thus, the thickness of the amorphous layer in the As-implanted specimen can be determined by profiling with a narrow secondary-ion energy window. Mechanisms for this effect are discussed.
- Research Organization:
- Cornell Univ., Ithaca, NY (USA). Baker Lab.
- OSTI ID:
- 6045359
- Report Number(s):
- AD-A-183225/2/XAB; TR-23
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
ARSENIC
ARSENIC 75
ARSENIC ISOTOPES
BORON
CHARGED PARTICLES
CHEMICAL ANALYSIS
CRYSTALS
DETECTION
DIMENSIONS
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ELEMENTS
FLUIDS
GASES
GERMANIUM
HEAT TREATMENTS
INTERMEDIATE MASS NUCLEI
ION IMPLANTATION
ION MICROPROBE ANALYSIS
IONS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
LASER SPECTROSCOPY
LAYERS
MASS SPECTROSCOPY
METALS
MICROANALYSIS
NONDESTRUCTIVE ANALYSIS
NONMETALS
NUCLEI
ODD-EVEN NUCLEI
RADIATIONS
RADIOISOTOPES
RAMAN SPECTROSCOPY
RARE GASES
SECONDS LIVING RADIOISOTOPES
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SPECTROSCOPY
SPUTTERING
STABLE ISOTOPES
THERMAL RADIATION
THICKNESS
XENON
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
ARSENIC
ARSENIC 75
ARSENIC ISOTOPES
BORON
CHARGED PARTICLES
CHEMICAL ANALYSIS
CRYSTALS
DETECTION
DIMENSIONS
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ELEMENTS
FLUIDS
GASES
GERMANIUM
HEAT TREATMENTS
INTERMEDIATE MASS NUCLEI
ION IMPLANTATION
ION MICROPROBE ANALYSIS
IONS
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
LASER SPECTROSCOPY
LAYERS
MASS SPECTROSCOPY
METALS
MICROANALYSIS
NONDESTRUCTIVE ANALYSIS
NONMETALS
NUCLEI
ODD-EVEN NUCLEI
RADIATIONS
RADIOISOTOPES
RAMAN SPECTROSCOPY
RARE GASES
SECONDS LIVING RADIOISOTOPES
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SPECTROSCOPY
SPUTTERING
STABLE ISOTOPES
THERMAL RADIATION
THICKNESS
XENON