A structural and electrical comparison of BCl and BF/sub 2/ ion-implanted silicon
Journal Article
·
· J. Electrochem. Soc.; (United States)
The molecular ions BCl/sup +/ and BF/sub 2//sup +/ are implanted into <100> silicon at an energy of 16 keV per boron atom in the dose range of 6 X 10/sup 14/-1.2 X 10/sup 15/ cm/sup -2/ to form shallow p/sup +//n junctions. Cross-sectional transmission electron microscopy shows that chlorine is at least four times as effective as fluorine in amorphizing silicon. The increase in thickness of the amorphous layer, however, has a small effect in the reduction of axial channeling of boron as measured by secondary ion mass spectrometry. After annealing for 30 min at 900/sup 0/C, diffusion of interstitial boron is enhanced by chlorine relative to fluorine, whereas the electrical activity of boron is inhibited. Diodes made with both BCl/sup +/ and BF/sub 2//sup +/ implantations have comparable I-V characteristics with low reverse-bias junction leakage currents that are not affected by a band of dislocation loops which remain near the original amorphous-crystalline interface.
- Research Organization:
- Philips Research Laboratories, Signetics Corporation, Sunnyvale, California
- OSTI ID:
- 6342754
- Journal Information:
- J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 132:2; ISSN JESOA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400400 -- Electrochemistry
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
BORON CHLORIDES
BORON COMPOUNDS
BORON FLUORIDES
CHEMICAL PREPARATION
CHEMISTRY
CHLORIDES
CHLORINE
CHLORINE COMPOUNDS
COMPARATIVE EVALUATIONS
CRYSTALLIZATION
ELECTRICAL PROPERTIES
ELECTROCHEMISTRY
ELECTRON MICROSCOPY
ELEMENTS
FABRICATION
FLUORIDES
FLUORINE
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HALOGENS
HEAT TREATMENTS
INTERFACES
ION IMPLANTATION
JUNCTIONS
MASS SPECTROSCOPY
MICROSCOPY
NONMETALS
P-N JUNCTIONS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SPECTROSCOPY
SYNTHESIS
TRANSMISSION ELECTRON MICROSCOPY
360601* -- Other Materials-- Preparation & Manufacture
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400400 -- Electrochemistry
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
BORON CHLORIDES
BORON COMPOUNDS
BORON FLUORIDES
CHEMICAL PREPARATION
CHEMISTRY
CHLORIDES
CHLORINE
CHLORINE COMPOUNDS
COMPARATIVE EVALUATIONS
CRYSTALLIZATION
ELECTRICAL PROPERTIES
ELECTROCHEMISTRY
ELECTRON MICROSCOPY
ELEMENTS
FABRICATION
FLUORIDES
FLUORINE
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HALOGENS
HEAT TREATMENTS
INTERFACES
ION IMPLANTATION
JUNCTIONS
MASS SPECTROSCOPY
MICROSCOPY
NONMETALS
P-N JUNCTIONS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SPECTROSCOPY
SYNTHESIS
TRANSMISSION ELECTRON MICROSCOPY