Anomalous migration of fluorine and electrical activation of boron in BF/sup +//sub 2/-implanted silicon
Fluorine distribution profiles for silicon implanted with 150-keV 1 x 10/sup 15/-cm/sup -2/ BF/sup +//sub 2/ at room temperature or at -110 /sup 0/C have been measured by SIMS as a function of anneal temperature. Anomalous migration of fluorine during annealing is observed, and is explained in terms of recrystallization and impurity-gettering effects. Electrical carrier distribution profiles of room-temperature BF/sup +//sub 2/-implanted silicon, measured by differential Hall effect methods, demonstrate that boron is electrically activated by epitaxial recrystallization during 550 /sup 0/C annealing. However, a damaged region near the crystalline-amorphous interface remains after recrystallization. This damaged layer is apparently responsible for the fluorine gettering.
- Research Organization:
- Coordinated Science Laboratory and Department of Electrical Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- OSTI ID:
- 5280665
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 32:3; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ANNEALING
BORON COMPOUNDS
BORON FLUORIDES
CHARGE CARRIERS
DEPTH DOSE DISTRIBUTIONS
DIFFUSION
DOPED MATERIALS
ELEMENTS
ENERGY RANGE
FLUORIDES
FLUORINE COMPOUNDS
GETTERING
HALIDES
HALL EFFECT
HALOGEN COMPOUNDS
HEAT TREATMENTS
IMPURITIES
ION IMPLANTATION
KEV RANGE
KEV RANGE 100-1000
MASS SPECTROSCOPY
PHYSICAL RADIATION EFFECTS
RADIATION DOSE DISTRIBUTIONS
RADIATION EFFECTS
RECRYSTALLIZATION
SEMIMETALS
SILICON
SPATIAL DOSE DISTRIBUTIONS
SPECTROSCOPY
TEMPERATURE DEPENDENCE