Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF/sup +//sub 2/ or Si/sup +/+B/sup +/
Electrical properties of recrystallized amorphous silicon layers, formed by BF/sup +//sub 2/ implants or Si/sup +/+B/sup +/ implants, have been studied by differential resistivity and Hall-effect measurements. Electrical carrier distribution profiles show that boron atoms inside the amorphized Si layers can be fully activated during recrystallization at 550 /sup 0/C. The mobility is also recovered. However, the tail of the B distribution, located inside a damaged region near the original amorphous-crystalline interface, remains inactive. This inactive tail has been observed for all samples implanted with BF/sup +//sub 2/. Only in a thicker amorphous layer, formed for example by Si/sup +/ predamage implants, can the entire B profile be activated. The etch rate of amorphous silicon in HF and the effect of fluorine on the recrystallization rate are also reported.
- Research Organization:
- Coordinated Science Laboratory and Department of Electrical Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- OSTI ID:
- 6782844
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Journal Issue: 1 Vol. 50:1; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Anomalous migration of fluorine and electrical activation of boron in BF/sup +//sub 2/-implanted silicon
Low-temperature activation and recrystallization of B{sup +}- and BF{sub 2}{sup +}-implanted LPCVD amorphous-Si films
Related Subjects
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ATOMIC IONS
BORON COMPOUNDS
BORON FLUORIDES
BORON IONS
CHARGED PARTICLES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ETCHING
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALL EFFECT
HALOGEN COMPOUNDS
HYDROFLUORIC ACID
HYDROGEN COMPOUNDS
INORGANIC ACIDS
INTERFACES
ION IMPLANTATION
IONS
LAYERS
MOLECULAR IONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RECRYSTALLIZATION
SEMIMETALS
SILICON
SILICON IONS
SURFACE FINISHING