Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF/sup +//sub 2/-implanted silicon

Journal Article · Mon Jan 01 04:00:00 EST 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325689· OSTI ID:6510805

Tsai, M Y; Day, D S; Streetman, B G; Williams, P; Evans, Jr, C A

Fluorine distribution profiles for silicon implanted with BF/sup +//sub 2/ have been measured by SIMS as a function of anneal temperature and time. Anomalous migration of fluorine is observed in samples having amorphized layers after implantation. Outdiffusion of fluorine occurs during recrystallization of the amorphous layer, and fluorine collects in regions of residual damage during annealing. This gettering of fluorine by defects illustrates the residual damage below the amorphized layer in samples implanted at room temperature is more difficult to anneal out than that in samples implanted at lower temperture (approx.-110 /sup 0/C).

• Research Organization: Coordinated Science Laboratory and Department of Electrical Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 6510805
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
AMORPHOUS STATE
ANNEALING
BORON COMPOUNDS
BORON FLUORIDES
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPTH DOSE DISTRIBUTIONS
DIFFUSION
ELEMENTS
FLUORIDES
FLUORINE
FLUORINE COMPOUNDS
GETTERING
HALIDES
HALOGEN COMPOUNDS
HALOGENS
HEAT TREATMENTS
ION IMPLANTATION
IONS
MOLECULAR IONS
NONMETALS
PHYSICAL RADIATION EFFECTS
RADIATION DOSE DISTRIBUTIONS
RADIATION EFFECTS
RECRYSTALLIZATION
SEMIMETALS
SILICON
SPATIAL DOSE DISTRIBUTIONS