Fluorine effects in BF{sub 2}{sup +} implants at various energies
- Varian Research Center, Palo Alto, CA (United States)
- Varian Ion Implant Systems, Gloucester, MA (United States); and others
The effects of fluorine co-implanted with boron in BF{sub 2}{sup +} implants at conventional energies (50-80 keV) are well-known. These effects include the pile-up of fluorine in regions of residual damage near the boron peak, the amorphous/crystalline interface, and the end o range, and the formation of fluorine bubbles after annealing. However, ultra-low energy BF{sub 2}{sup +} implants (below 5 keV) and plasma-doped samples do not show any of these effects. In order to identify the transition where the fluorine effects disappear, a series of BF{sub 2}{sup +} implants at energies ranging from 2 to 50 keV and doses of 5 {times} 10{sup 14} to 5 {times} 10{sup 15} cm{sup -2} were performed. The implants were rapidly annealed at temperatures of 900-1000{degrees}C for 30 s and then analyzed using SIMS and TEM. The results suggest a dependency of these undesirable fluorine effects on ion energy, implant dose, and anneal temperature.
- OSTI ID:
- 621292
- Report Number(s):
- CONF-9606110--
- Country of Publication:
- United States
- Language:
- English
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