Application of rapid isothermal annealing to shallow p-n junctions via BF/sub 2/ implants

Journal Article · Mon Apr 01 04:00:00 EST 1985 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2113984· OSTI ID:6079305

Tung, N C

Results of rapid isothermal annealing (RIA) experiments are reported. Wafer warpage, temperature homogeneity, slip lines, and reproducibility of temperature cycles have been investigated. Sheet resistance measurements were carried out for RIA (1000/sup 0/ C, 10s) and for conventional furnace annealing for 30 and 50 keV BF/sub 2/ implants, the ion dose varying between 5 X 10/sup 13/ and 7 X 10/sup 15/ cm/sup -2/. Spreading resistance measurements revealed that, in the case of RIA, junctions as shallow as 0.17, 0.19, and 0.21 /sigma phi/m have been obtained, respectively, for ion doses of 1 X 10/sup 13/, 3 X 10/sup 15/, and 5 X 10/sup 15/ cm/sup -2/ at a BF/sub 2/ energy of 50 keV. Junction depths obtained through RIA are a factor of 3-4 lower than those obtained by conventional annealing: dopant redistribution is negligible. Boron and fluorine atom concentration profiles have been equally investigated by secondary ion mass spectrometry (SIMS).

• Research Organization: Centre National d'Etudes des Telecommunications, Chemin du Vieux Chene, Meylan
• OSTI ID: 6079305
• Journal Information: J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 132:4; ISSN JESOA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
ATOMS
BENDING
BORON COMPOUNDS
BORON FLUORIDES
FABRICATION
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
ION SPECTROSCOPY
ISOTHERMS
JUNCTIONS
MASS SPECTROSCOPY
MATERIALS TESTING
P-N JUNCTIONS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SHEETS
SLIP
SPECTROSCOPY
TEMPERATURE EFFECTS
TESTING
THERMAL CONDUCTIVITY
THERMODYNAMIC PROPERTIES
VERY HIGH TEMPERATURE