Effect of additional low temperature RTA on ultra-shallow p{sup +}-n junction formation

Conference · Tue Dec 31 04:00:00 EST 1996

OSTI ID:621298

Lee, Kil-Ho; Oh, Jae-Geun; Cho, Byung-Jin; Kim, Jong-Choul ^[1]

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1. Hyundai Electronics Ind. Co. Ltd., Ichon, Kyoungki-do (Korea, Democratic People`s Republic of)

The effect of Additional Low Temperature RTA process (ALTRTA) prior to furnace annealing (FA) on shallow junction formation has been investigated. In p{sup +}-n junction implanted by BF{sub 2} at 20 keV with a dose of 3 {times} 10{sup 15} ions/cm{sup 2}, it was found that ALTRTA at 950{degrees} C for 5 sec before FA at 850{degrees} C for 60 min decreased the junction depth, sheet resistance and junction leakage current by 10 %, 2 %, and 83.7 %, respectively compared to conventional FA process. As FA time increased, the retardation of boron diffusion by ALTRTA was more prominent. Cross-sectional TEM study showed that the density and size of dislocation in ALTRTA sample were reduced. Therefore, it is speculated that the density reduction of Si-interstitial due to point defect recombination (Interstitial + Vacancy = 0) during ALTRTA retards the boron diffusion, and reduces junction leakage current. The effective ALTRTA condition was found to depend on ion implantation energy and/or dose, and the lower ion implantation energy and/or dose required the lower RTA temperature. From the results, the ALTRTA process prior to FA for BPSG flow is very effective for the formation of ultra-shallow junction with the improvement of junction characteristics.

• OSTI ID: 621298
• Report Number(s): CONF-9606110--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BORON FLUORIDES
BORON IONS
DIFFUSION
ION IMPLANTATION
LEAKAGE CURRENT
P-N JUNCTIONS
POINT DEFECTS
SILICON