Evaluation of Si pre-amorphization for obtaining ultra-shallow junctions
Conference
·
OSTI ID:621262
- Univ. of Texas, Austin, TX (United States)
- Texas Instruments, Dallas, TX (United States); and others
Two pre-amorphization techniques, shallow and deep amorphization using Si implants have been evaluated for obtaining shallow p-type junctions using B or BF2 implants followed by a Rapid Thermal Anneal (RTA) step. The effect on diffusion behavior and evolution of end-of-range dislocation loops has been studied experimentally using secondary ion mass spectrometry and planar and cross-sectional transmission electron microscopy. The shallow pre-amorphization followed by the dopant implant does not help in reduction of junction depth for either B or BF{sub 2} implants. Deep amorphization does help reduce junction depth. The pMOSFET leakage for deep amorphization scheme under a drain bias of 2.5 V is low ({approximately}pA/{mu}m). However, the reverse diode leakage for different diode structures for deep pre-amorphization is high ({approximately}nA) for a reverse bias of 3.6 V.
- OSTI ID:
- 621262
- Report Number(s):
- CONF-9606110--; CNN: Contract MS-505
- Country of Publication:
- United States
- Language:
- English
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