Ultra-Shallow P{sup +}/N Junction Formation in Si Using Low Temperature Solid Phase Epitaxy Assisted with Laser Activation
- Keio University, 3-14-1 Hiyoshi, Kouhoku-ku, Yokohama, Kanagawa, 223-8522 (Japan)
- SEN Corporation, an SHI and Axcelis Company, SBS Tower 9F, 4-10-1 Yoga, Setagaya-ku, Tokyo, 158-0097 (Japan)
- Sumitomo Heavy Industries Ltd., 19 Natsushima-cho, Yokosuka, Kanagawa, 237-8555 (Japan)
A combination of Ge pre-amorphization implantation (Ge-PAI), low-energy B implantation and laser annealing is a promising method to form highly-activated, abrupt and ultra-shallow junctions (USJ). In our previous report of IIT 2006, we succeeded in forming pn junctions less than 10 nm using non-melt double-pulsed green laser. However, a large leakage current under reverse bias was observed consequently due to residual defects in the implanted layer. In this study, a method to form USJ is proposed: a combination of low-temperature solid phase epitaxy and non-melt laser irradiation for B activation. Ge pre-amorphization implantation was performed at energy of 6 keV with a dose of 3x10{sup 14}/cm{sup 2}. Then B implantation was performed at energy of 0.2 keV with a dose of 1.2x10{sup 15}/cm{sup 2}. Samples were annealed at 400 deg. C for 10 h in nitrogen atmosphere. Subsequently, non-melt laser irradiation was performed at energy of 690 mJ/cm{sup 2} and pulse duration of 100 ns with intervals of 300 ns. As a result, USJ around 10 nm with better crystallinity was successfully formed. And the leakage current of pn diodes was reduced significantly. Moreover, it is proven from secondary ion mass spectroscopy (SIMS) analysis that transient enhanced diffusion (TED) of B is specifically suppressed.
- OSTI ID:
- 21251723
- Journal Information:
- AIP Conference Proceedings, Vol. 1066, Issue 1; Conference: 17. international conference on ion implantation technology, Monterey, CA (United States), 8-13 Jun 2008; Other Information: DOI: 10.1063/1.3033688; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
AMORPHOUS STATE
ANNEALING
ATMOSPHERES
CRYSTAL GROWTH
EPITAXY
ION IMPLANTATION
ION MICROPROBE ANALYSIS
KEV RANGE 01-10
LASER RADIATION
LASERS
LAYERS
LEAKAGE CURRENT
MASS SPECTROSCOPY
NITROGEN
P-N JUNCTIONS
SILICON
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
TIME DEPENDENCE