Ultra-Shallow Junctions Fabrication by Plasma Immersion Implantation on PULSION registered Followed by Laser Thermal Processing
- ION BEAM SERVICES, ZI Peynier-Rousset, rue Gaston Imbert Prolongee, 13790 Peynier (France)
- UMR CNRS LP3, Universite de la mediterranee, Campus de Luminy, Case 917, 13288 Marseille cedex 9-France (France)
- SEMILAB Semilab, Inc., 2 Prielle K. sir., H-1117 Budapest (Hungary)
- CIMPACA Caracterisation Plateform, ZI Peynier Rousset, F13790 Rousset (France)
In order to achieve the requirements for P+/N junctions for <45 nm ITRS nodes, ultra low energy and high dose implantations are needed. Classical beamline implantation is now limited in low energies, compared to Plasma Immersion Ion Implantation (PIII) which efficiency is no more to prove for the realization of Ultra-Shallow Junctions (USJ) in semiconductor applications : this technique allows to get ultimate shallow profiles (as implanted) due to no lower limitation of energy and high dose rate. Electrical activation is also a big issue since it has to afford high electrical activation rate with very low diffusion. Laser annealing is one of the candidates for the 45 nm node. This paper presents electrical and physico-chemical characterizations of junctions realized with BF3 PIII followed by laser thermal processing with aim to obtain ultra-shallow junctions. Different implantation conditions (acceleration voltage/dose) and laser conditions (laser types, fluence/number of shots) are used for this study. Pre-amorphization is also used to confine the junction depth, and is shown to have a positive effect on junction depth but leads in higher junction leakage due to the remaining of EOR defects. The characterization is done using Optical characterization tool (SEMILAB) for sheet resistance and junction leakage measurements. SIMS is used for Boron profile and junction depth.
- OSTI ID:
- 21251707
- Journal Information:
- AIP Conference Proceedings, Vol. 1066, Issue 1; Conference: 17. international conference on ion implantation technology, Monterey, CA (United States), 8-13 Jun 2008; Other Information: DOI: 10.1063/1.3033665; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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