Low temperature formation of shallow p{sup +}n junctions by BF{sub 2}{sup +} implantation into thin Pd{sub 2}Si films on Si substrates

Journal Article · Mon May 01 04:00:00 EDT 1995 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.2048616· OSTI ID:63202

Lin, C T; Ma, K P; Chou, P F; Cheng, H C ^[1]

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1. National Chiao Tung Univ., Hsinchu (Taiwan, Province of China)

Excellent silicided shallow p{sup +}n junctions have been successfully achieved by the implantation of BF{sub 2}{sup +} ions into thin Pd{sub 2}Si films on Si substrates to a dose of 5 {times} 10{sup 15} cm{sup {minus}2} and subsequent low temperature (even at 550 C) furnace annealing. The formed junctions have been characterized for respective implantation conditions. In this experiment, the implant energy is the key role in obtaining a low leakage diode. Reverse current density of about 3 nA/cm{sup 2} and an ideality factor of about 1.05 can be attained by the implantation of BF{sub 2}{sup +} ions at 80 keV and subsequent annealing at 550 C. The junction depth is about 0.09 {mu}m, measured by the spread resistance method. As compared with the results of unimplanted specimens, the implantation of BF{sub 2}{sup +} ions into a thin Pd{sub 2}Si layer can stabilize the silicide film and prevent it from forming islands during high temperature annealing.

• Sponsoring Organization: USDOE
• OSTI ID: 63202
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 5 Vol. 142; ISSN JESOAN; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
BORON FLUORIDES
COATINGS
FABRICATION
ION IMPLANTATION
LEAKAGE CURRENT
P-N JUNCTIONS
PALLADIUM SILICIDES
SILICON
STABILITY