Strain-conserving doping of a pseudomorphic metastable Ge{sub 0.06}Si{sub 0.94} layer on Si(100) by low-dose BF{sub 2}{sup +} implantation
- California Institute of Technology, MS 116-81, Pasadena, California 91125 (United States)
- Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles, California 90024-1594 (United States)
- Motorola Inc., Mesa, Arizona 85202 (United States)
A thick (260 nm) pseudomorphic metastable {ital n}-type Ge{sub 0.06}Si{sub 0.94} layer grown by molecular beam epitaxy on an {ital n}-type Si(100) substrate was implanted at room temperature with 70 keV BF{sub 2}{sup +} ions to a dose of 3{times}10{sup 13} cm{sup {minus}2}, so that a p{minus}n junction was formed in the GeSi layers. The samples were subsequently annealed for 10{endash}40 s in a lamp furnace with a nitrogen ambient, or for 30 min in a vacuum-tube furnace. The samples were characterized by 2 MeV {sup 4}He backscattering/channeling spectrometry, double-crystal x-ray diffractometry, transmission electron microscopy, and by Hall effect measurements using the van der Pauw sample geometry. Samples annealed for either 40 s or 30 min at 800{degree}C exhibit full electrical activation of the boron in the GeSi epilayer without losing their strain. The Hall mobility of the holes is lower than that of {ital p}-type Si doped under the same experimental conditions. These results can be attributed to the Hall factor of heavily doped {ital p}-type GeSi films which is less than unity while the Hall factor of a heavily doped {ital p}-type Si or {ital n}-type GeSi film is close to unity. When annealed at 900{degree}C, the strain in both implanted and unimplanted layers is partly relaxed after 30 min, whereas it is not visibly relaxed after 40 s. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 450253
- Journal Information:
- Journal of Applied Physics, Vol. 81, Issue 4; Other Information: PBD: Feb 1997
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GERMANIUM SILICIDES
ION IMPLANTATION
SEMICONDUCTOR MATERIALS
P-N JUNCTIONS
SILICON
X-RAY DIFFRACTION
TRANSMISSION ELECTRON MICROSCOPY
HOLE MOBILITY
BORON FLUORIDES
KEV RANGE 10-100
STRESSES
ION CHANNELING
ELECTRIC CONDUCTIVITY
ANNEALING
METASTABLE STATES
PHASE STUDIES
CARRIER MOBILITY
CRYSTAL DOPING
BACKSCATTERING