Si{sup +} ion implantation for strain relaxation of pseudomorphic Si{sub 1-x}Ge{sub x}/Si(100) heterostructures

Journal Article · Mon Jun 01 04:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3139274· OSTI ID:21352242

Buca, D; Minamisawa, R A; Trinkaus, H; Hollaender, B; Mantl, S ^[1]; Loo, R; Caymax, M ^[2]

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1. Institute of Bio- and Nanosystems (IBN1-IT), Forschungszentrum Juelich, D-52425 Juelich, Germany and JARA-Fundamentals of Future Information Technology (Germany)
2. IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

A mechanism of strain relief of pseudomorphic Si{sub 1-x}Ge{sub x}/Si(100) heterostructures by Si{sup +} ion implantation and annealing is proposed and analytically modeled. The degree of strain relaxation is presented as a function of Ge content and implantation and annealing parameters. Rutherford backscattering spectrometry/channeling, Raman spectroscopy, and transmission electron microscopy are employed to quantify the efficiency of the relaxation process and to examine the quality of the samples, respectively. The mechanism and the conditions for strain relaxation are discussed in terms of dislocation loop formation in the implanted range with emphasis on loop formation in the compressively strained SiGe layer. The detrimental effect of local amorphization of the SiGe layer on its relaxation and on strain transfer to the Si-cap layer is also addressed.

• OSTI ID: 21352242
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 105; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
AMORPHOUS STATE
ANNEALING
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELECTRON MICROSCOPY
ELEMENTS
GERMANIUM ALLOYS
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
HEAT TREATMENTS
ION IMPLANTATION
IONS
LASER SPECTROSCOPY
LAYERS
LINE DEFECTS
MATERIALS
MICROSCOPY
RAMAN SPECTRA
RAMAN SPECTROSCOPY
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICIDES
SILICON
SILICON ALLOYS
SILICON COMPOUNDS
SILICON IONS
SPECTRA
SPECTROSCOPY
TRANSMISSION ELECTRON MICROSCOPY