Spreading resistance profiling study of GeSi/Si structures by high dose Ge implantation into Si
Book
·
OSTI ID:375940
- Chinese Univ. of Hong Kong (Hong Kong)
- Beijing Normal Univ. (China)
- Charles Evans and Associates, Redwood City, CA (United States)
Hetero-structures of GeSi layers on Si have been produced by high dose Ge implantation into p-type (100) Si wafers at 150 or 300 keV at various doses. From spreading resistance profiling measurements, it is found that for samples implanted at 300 keV at a sufficiently high dose, there is an unexpected resistivity type conversion due to the Ge implantation. The depths of the n-p junction formed as-implanted can be larger than 1.5 {micro}m, far beyond the Ge projected range. Upon annealing, the junction position moves toward the surface and eventually stops at a depth corresponding to the thickness of the GeSi layer. However, no such n-p junction formation was observed in the spreading resistance profiles of the 150 keV implanted samples. These spreading resistance results are discussed in conjunction with results from RBS and SIMS experiments.
- OSTI ID:
- 375940
- Report Number(s):
- CONF-941144--; ISBN 1-55899-255-3
- Country of Publication:
- United States
- Language:
- English
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