Synthesis of Si/Si{sub 1-x}Ge{sub x}/Si heterostructures for device applications using Ge{sup +} implantation into silicon
Conference
·
OSTI ID:621266
- Univ. of Surrey (United Kingdom); and others
The synthesis and doping of Si/Si{sub 1-x}Ge{sub x}/Si heterostructures by ion implantation is being investigated as an alternative to epitaxial deposition as a means of forming heterostructures for device applications. Test structures with graded Si/Si{sub 1-x}Ge{sub x}, interfaces have been formed in n-type Si wafers by the implantation of 70keV or 140keV Ge{sup +} ions and doses up to 3{times}10{sup 16}Ge{sup +} cm{sup -2} to form alloy layers with peak Ge concentrations of up to 11 atomic %. BF{sub 2}{sup +} ions have been implanted to form p-type surface layers and post amorphisation, using 500keV Si{sup +} into cooled substrates followed by solid phase epitaxial regrowth, has been used to control End of Range (EoR) defects. TEM data from post amorphised samples reveal no extended defects within the alloy region but show a band of EoR defects buried 1{mu}m beneath the surface. The composition, microstructure and junction quality of the alloy layers will be discussed to high-light the potential impact of the process on the manufacturability of advanced bipolar (HBT) devices.
- OSTI ID:
- 621266
- Report Number(s):
- CONF-9606110--
- Country of Publication:
- United States
- Language:
- English
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