In situ TEM studies of the growth of strained Si sub 1 minus x Ge sub x by solid phase epitaxy
Conference
·
OSTI ID:6334020
- Brown Univ., Providence, RI (USA). Div. of Engineering
- Oak Ridge Associated Universities, Inc., TN (USA)
- Carnegie-Mellon Univ., Pittsburgh, PA (USA). Dept. of Electrical and Computer Engineering
- Bellcore, Red Bank, NJ (USA)
In this paper we report on the epitaxial growth of strained thin films Si{sub 1-x}Ge{sub x} on Si by solid phase epitaxy. For these solid phase epitaxy experiments, a 180-nm-thick strained-layer of Si{sub 1-x}Ge{sub x} with x{sub Ge} = 11.6 at. % was epitaxially grown on {l angle}001{r angle} Si using chemical vapor deposition. The near surface region of the substrate, including the entire Si{sub 1-x}Ge{sub x} film, was then amorphized to a depth of 380 nm using a two step process of 100 keV, followed by 200 keV, {sup 29}Si ion implantation. The epitaxial regrowth of the alloy was studied with in situ TEM heating techniques which enabled an evaluation of the activation energy for strained solid phase epitaxial regrowth. We report that the activation energy Si{sub 1-x}Ge{sub x} (x = 11.6 at. %) strained-layer regrowth is 3.2 eV while that for unstrained regrowth of pure Si is 2.68 eV and that regrowth in the alloy is slower than in pure Si over the temperature range 490 to 600{degree}C. 8 refs., 3 figs., 1 tab.
- Research Organization:
- Oak Ridge National Lab., TN (USA); Oak Ridge Associated Universities, Inc., TN (USA)
- Sponsoring Organization:
- DOD; DOE/ER; NSF
- DOE Contract Number:
- AC05-84OR21400; AC05-76OR00033
- OSTI ID:
- 6334020
- Report Number(s):
- CONF-901105-88; ON: DE91007278; CNN: N00014-90-J-4051; DMR-9002994
- Country of Publication:
- United States
- Language:
- English
Similar Records
A study of the effect of misfit-induced strain on the kinetics of solid phase epitaxy in the Si sub 1 minus sub x Ge sub x on l angle 001 r angle Si system
In situ TEM studies of the effect of misfit strain on the kinetics of Si{sub 1-x}Ge{sub x} solid phase epitaxy: Temperature calibration and surface effects
In situ TEM studies of the effect of misfit strain on the kinetics of Si sub 1-x Ge sub x solid phase epitaxy: Temperature calibration and surface effects
Journal Article
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Tue Oct 15 00:00:00 EDT 1991
· Journal of Applied Physics; (United States)
·
OSTI ID:5203209
In situ TEM studies of the effect of misfit strain on the kinetics of Si{sub 1-x}Ge{sub x} solid phase epitaxy: Temperature calibration and surface effects
Conference
·
Fri May 01 00:00:00 EDT 1992
·
OSTI ID:10142104
In situ TEM studies of the effect of misfit strain on the kinetics of Si sub 1-x Ge sub x solid phase epitaxy: Temperature calibration and surface effects
Conference
·
Tue Dec 31 23:00:00 EST 1991
·
OSTI ID:5161585
Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
AMORPHOUS STATE
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTRON MICROSCOPY
EPITAXY
FILMS
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
MICROSCOPY
SILICIDES
SILICON COMPOUNDS
SURFACE COATING
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
360602* -- Other Materials-- Structure & Phase Studies
AMORPHOUS STATE
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
ELECTRON MICROSCOPY
EPITAXY
FILMS
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
MICROSCOPY
SILICIDES
SILICON COMPOUNDS
SURFACE COATING
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY