A study of the effect of misfit-induced strain on the kinetics of solid phase epitaxy in the Si sub 1 minus sub x Ge sub x on l angle 001 r angle Si system
- Division of Engineering, Brown University, Box D, Providence, Rhode Island (USA)
- Oak Ridge Associated Universities, Oak Ridge National Laboratory, Bldg. 5500, MS6376 Oak Ridge, Tennessee (USA)
- Bellcore, Red Bank, New Jersey (USA)
In this paper we present the results of an experimental determination of the rate of solid phase epitaxical regrowth of amorphous Si{sub 1{minus}{ital x}}Ge{sub {ital x}} on {l angle}001{r angle} Si as a function of temperature and Ge concentration. Layers of chemical vapor deposited Si{sub 1{minus}{ital x}}Ge{sub {ital x}} roughly 200-nm thick containing 5.4, 11.6, and 17.0 at. % Ge were amorphized with a two-step process of 100 keV, followed by 200 keV, {sup 29}Si ion implantation. This procedure left the near surface region of the substrate, including the entire Si{sub 1{minus}{ital x}}Ge{sub {ital x}} film, amorphous to a depth of 380 nm. The epitaxical recrystallization of the alloy portion (5.4, 11.6, or 17 at. % Ge) of the amorphous layer results in the development of large lattice mismatch stresses (0.5--2 GPa). The rate of epitaxical regrowth of the amorphous material was studied with isothermal heating and {ital in} {ital situ} transmission electron microscopy observations. Isothermal annealing at temperatures between 476 and 602 {degree}C show that, compared to pure unstrained Si, the rate of regrowth is decreased in strained alloys of Si{sub 1{minus}{ital x}}Ge{sub {ital x}}. Furthermore, we report that the activation energy for strained-layer regrowth of Si{sub 1{minus}{ital x}}Ge{sub {ital x}} is not a strong function of composition and, for all three compositions, was in the range 3.2{plus minus}0.2 eV. This is significantly larger than the activation energy for the homoepitaxical regrowth of unstrained pure Si. Stress related origins of these observations are discussed.
- DOE Contract Number:
- AC05-84OR21400; AC05-76OR00033
- OSTI ID:
- 5203209
- Journal Information:
- Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 70:8; ISSN 0021-8979; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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