In situ TEM studies of the effect of misfit strain on the kinetics of Si{sub 1-x}Ge{sub x} solid phase epitaxy: Temperature calibration and surface effects
Conference
·
OSTI ID:10142104
- Brown Univ., Providence, RI (United States). Div. of Engineering
- Oak Ridge National Lab., TN (United States)
While in situ TEM studies have proven useful for the direct observation of solid-state reaction mechanisms, such studies rarely provide quantitative kinetic data. This limitation is due to problems associated with the accurate measure of local sample temperature, assessment of beam heating and damage, and minimization of thin-film effects. Sinclair et al have proposed a technique for establishing the temperature of a sample during in situ TEM annealing experiments in which the well-characterized Si <001> solid phase epitaxy amorphous-crystalline transformation rate is used to estimate the temperature in an adjacent (but not contiguous) region of the specimen. We have used this in situ technique to determine the activation energy for strained solid phase epitaxy of Si{sub 1-x}Ge{sub 2}(x = 5.4, 11.6, and 17 at %).
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States); Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC05-84OR21400; AC05-76OR00033
- OSTI ID:
- 10142104
- Report Number(s):
- CONF-920819--15-Extd.Abst.; ON: DE92011689; CNN: Grant N00014-90-J-4051; Grant DMR-9002994
- Country of Publication:
- United States
- Language:
- English
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