Resistivity and morphology of TiSi sub 2 formed on Xe sup + -implanted polycrystalline silicon

Journal Article · Mon Jan 29 04:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103295· OSTI ID:7004319

Kuwano, H; Phillips, J R; Mayer, J W ^[1]

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1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (USA)

Xe ion irradiation of polycrystalline silicon before Ti deposition is found to affect subsequent silicide formation. Silicide films were prepared by implanting 60, 100, or 240 keV Xe{sup +} ions into 500-nm-thick undoped polycrystalline silicon before depositing Ti and annealing in vacuum. Preimplantation altered the subsequent silicide resistivity, x-ray diffraction patterns, and morphology as compared to films prepared on unimplanted polycrystalline Si substrates. We found that minimal TiSi{sub 2} resistivities were achieved at lower temperatures with preimplantation, indicating that the Xe-implanted substrate promotes a lower temperature transition from the metastable C49 phase to the low-resistivity equilibrium C54 phase of TiSi{sub 2}. X-ray diffraction results confirmed the lower temperature formation of the C54 phase with preimplantation. Low-temperature annealing (650 {degree}C, 30 min) of 6{times}10{sup 16} cm{sup {minus}2}, 240 keV Xe{sup +}-implanted samples yielded low-resistivity ({similar to}22 {mu}{Omega} cm) silicide films, while simultaneously annealed samples without preimplantation had resistivity five times higher. Lower doses were effective at lower implant energies, with low resistivity achieved after 725 {degree}C, 30 min annealing for 2{times}10{sup 15} cm{sup {minus}2}, 60 keV Xe{sup +} preimplantation.

• OSTI ID: 7004319
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:5; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
CHARGED PARTICLES
CRYSTAL GROWTH
CRYSTAL-PHASE TRANSFORMATIONS
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
ION IMPLANTATION
IONS
METALS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
THIN FILMS
TITANIUM
TITANIUM COMPOUNDS
TITANIUM SILICIDES
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
XENON IONS