Resistivity and morphology of TiSi sub 2 formed on Xe sup + -implanted polycrystalline silicon

Journal Article · Mon Jan 29 00:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103295· OSTI ID:7004319

Kuwano, H; Phillips, J R; Mayer, J W ^[1]

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1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (USA)

Xe ion irradiation of polycrystalline silicon before Ti deposition is found to affect subsequent silicide formation. Silicide films were prepared by implanting 60, 100, or 240 keV Xe{sup +} ions into 500-nm-thick undoped polycrystalline silicon before depositing Ti and annealing in vacuum. Preimplantation altered the subsequent silicide resistivity, x-ray diffraction patterns, and morphology as compared to films prepared on unimplanted polycrystalline Si substrates. We found that minimal TiSi{sub 2} resistivities were achieved at lower temperatures with preimplantation, indicating that the Xe-implanted substrate promotes a lower temperature transition from the metastable C49 phase to the low-resistivity equilibrium C54 phase of TiSi{sub 2}. X-ray diffraction results confirmed the lower temperature formation of the C54 phase with preimplantation. Low-temperature annealing (650 {degree}C, 30 min) of 6{times}10{sup 16} cm{sup {minus}2}, 240 keV Xe{sup +}-implanted samples yielded low-resistivity ({similar to}22 {mu}{Omega} cm) silicide films, while simultaneously annealed samples without preimplantation had resistivity five times higher. Lower doses were effective at lower implant energies, with low resistivity achieved after 725 {degree}C, 30 min annealing for 2{times}10{sup 15} cm{sup {minus}2}, 60 keV Xe{sup +} preimplantation.

• OSTI ID: 7004319
• Journal Information: Applied Physics Letters; (USA), Vol. 56:5; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
TITANIUM
DEPOSITION
TITANIUM SILICIDES
CRYSTAL GROWTH
ELECTRIC CONDUCTIVITY
CRYSTAL-PHASE TRANSFORMATIONS
THIN FILMS
XENON IONS
CHARGED PARTICLES
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
IONS
METALS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
RADIATION EFFECTS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
360605* - Materials- Radiation Effects