The influence of fluorine on boron-enhanced diffusion in silicon by BF{sub 2}{sup +} implantation through oxide during high temperature rapid thermal anneal

Journal Article · Sat Nov 01 04:00:00 EST 1997 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1838075· OSTI ID:564065

Wang, L Z; Luo, M S.C.; Tseng, H H; Ajuria, S A ^[1]

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1. Motorola, Austin, TX (United States)

BF{sub 2}{sup +} implantation through a sacrificial oxide for the formation of p{sup +}/n shallow junctions is frequently applied in device fabrication. The effects of fluorine on boron diffusion in and out of a silicon substrate during nitrogen-ambient high temperature rapid thermal annealing have been studied. By comparing B and BF{sub 2} implanted substrates, it is shown that fluorine out-diffusion during high temperature annealing coincides with enhanced boron out-diffusion into the oxide and suppressed boron diffusion into the substrate. In particular, when fluorine accumulated at the end of range dislocation loops is driven out of the bulk, shallower junctions are observed.

• Sponsoring Organization: USDOE
• OSTI ID: 564065
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 11 Vol. 144; ISSN JESOAN; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ANNEALING
BORON FLUORIDES
DIFFUSION
FABRICATION
ION IMPLANTATION
MOSFET
P-N JUNCTIONS
SILICON