Annealing and diffusion characteristics of boron-through-oxide implanted silicon

Thesis/Dissertation · Tue Jan 01 04:00:00 EST 1991

OSTI ID:5632153

Fan, Dertsyr

The author investigates the diffusion and damage-annealing characteristics as a result of boron implantation through a surface oxide into the silicon, a process that is commonly realized in the fabrication of p-n junctions. Defect structures were examined using plan-view and cross-section transmission-electron microscopies. It is shown that recoil-implanted oxygen plays a critical role in determining the above annealing characteristics. For instance, transient-enhanced diffusion of boron, as is widely observed for boron-implanted silicon, does not occur in the case of through-oxide implantation. The initial suppression of the defect-enhanced diffusion lasts for a limited period of time after which enhanced diffusion occurs again. The so-called incubated enhanced diffusion' is characterized as due to recoiled-oxygen precipitation-emitting point defect that enhances boron motion. The incubation time constant, the magnitude for the enhanced diffusion, and the corresponding microstructures will also be shown as a strong function of the oxide thickness, annealing temperatures and sequence, and addition of fluorine during the annealing process. These are discussed in terms of interactions between recoil implanted oxygen and damage-nucleated dislocations.

• Research Organization: Lehigh Univ., Bethlehem, PA (United States)
• OSTI ID: 5632153
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
665300 -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
BORON IONS
CHALCOGENIDES
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DAMAGE
ELEMENTS
HEAT TREATMENTS
ION IMPLANTATION
IONS
OXIDES
OXYGEN COMPOUNDS
RECOILS
SEMIMETALS
SILICON