A STEM study of P and Ge segregation to grain boundaries in Si{sub 1{minus}x}Ge{sub x} thin films
Conference
·
OSTI ID:20107905
The segregation of phosphorus to grain boundaries in phosphorus implanted Si{sub 0.87}Ge{sub 0.13} films, deposited by chemical vapor deposition (CVD), was directly observed by scanning transmission electron microscopy (STEM) with energy dispersive x-ray (EDX) microanalysis. The segregation was determined to be a thermal equilibrium process by measuring and comparing the average phosphorus concentrations at the grain boundaries in Si{sub 0.87}Ge{sub 0.13} films subjected to 700, 750 or 800 C annealing, following the implantation and 1,000 C annealing processes. The measured segregation energy was 0.28 eV/atom. No Ge segregation was found at grain boundaries in phosphorus implanted Si{sub 0.87}Ge{sub 0.13} films by STEM x-ray microanalysis. Neither was evidence shown by STEM microanalysis that Ge segregated to grain boundaries in intrinsic Si{sub 1{minus}x}Ge{sub x} films with x = 0.02, 0.13 and 0.31. Secondary ion mass spectrometry (SIMS) analysis showed that these intrinsic Si{sub 1{minus}x}Ge{sub x} films contained 10{sup 19} to 4 x 10{sup 19}/cm{sup 3} H, depending on the deposition temperature.
- Research Organization:
- Inst. of Microelectronics (SG)
- OSTI ID:
- 20107905
- Country of Publication:
- United States
- Language:
- English
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