Stem x-ray microanalytical study of phosphorous segregation to grain boundaries in thin-film silicon
Technical Report
·
OSTI ID:5264266
Stem X-ray microanalysis has been applied in the characterization of phosphorus segregation to individual grain boundaries in thin-film silicon. Heavily doped material annealed between 650/sup 0/C and 800/sup 0/C was examined. The extent of segregation varied from boundary to boundary in a given sample. This leads to an average segregation energy of 7.5 Kcal/mole. Using the coincident site lattice model of grain boundary structure, the amount of segregation for a few boundaries was correlated with boundary type. It appears that geometrical models may have some basis for predicting structural and energetic features of diamond structure materials.
- Research Organization:
- California Univ., Berkeley (USA). Lawrence Berkeley Lab.
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5264266
- Report Number(s):
- LBL-14614; ON: DE82018719
- Country of Publication:
- United States
- Language:
- English
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