Scanning transmission electron microscope microanalytical study of phosphorus segregation at grain boundaries in thin-film silicon
Journal Article
·
· Appl. Phys. Lett.; (United States)
Phosphorus segregation at grain boundaries in thin-film silicon has been investigated by scanning transmission electron microscope x-ray microanalysis. Low-pressure chemically vapor-deposited silicon was heavily diffusion doped and subsequently annealed at 650, 700, 750, or 800 /sup 0/C. Enhanced phosphorus concentrations were observed at grain boundaries with increasing levels at lower annealing temperatures. The amount of segregation was also found to vary from boundary to boundary in each specimen. The average energy of segregation was evaluated as 7.5 kcal/mol.
- Research Organization:
- Materials and Molecular Research Division, Lawrence Berkeley Laboratory, Berkeley, California 94720
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 6809545
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:10; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALLOYS
ANNEALING
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
DATA
DEPOSITION
DIFFUSION
DIMENSIONS
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELECTRON SCANNING
ELEMENTS
EXPERIMENTAL DATA
FILMS
GRAIN BOUNDARIES
HEAT TREATMENTS
HIGH TEMPERATURE
INFORMATION
IONIZING RADIATIONS
MATERIALS
MICROANALYSIS
MICROSCOPY
MICROSTRUCTURE
NUMERICAL DATA
PHOSPHORUS ADDITIONS
QUANTITY RATIO
RADIATIONS
SEMIMETALS
SILICON
SURFACE COATING
TEMPERATURE DEPENDENCE
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
VERY HIGH TEMPERATURE
X RADIATION
360603* -- Materials-- Properties
ALLOYS
ANNEALING
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
DATA
DEPOSITION
DIFFUSION
DIMENSIONS
DOPED MATERIALS
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELECTRON SCANNING
ELEMENTS
EXPERIMENTAL DATA
FILMS
GRAIN BOUNDARIES
HEAT TREATMENTS
HIGH TEMPERATURE
INFORMATION
IONIZING RADIATIONS
MATERIALS
MICROANALYSIS
MICROSCOPY
MICROSTRUCTURE
NUMERICAL DATA
PHOSPHORUS ADDITIONS
QUANTITY RATIO
RADIATIONS
SEMIMETALS
SILICON
SURFACE COATING
TEMPERATURE DEPENDENCE
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
VERY HIGH TEMPERATURE
X RADIATION