Attenuated total reflectance study of silicon-rich silicon dioxide films

Journal Article · Tue Jul 01 04:00:00 EDT 1980 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.328130· OSTI ID:5270670

Hartstein, A; DiMaria, D J; Dong, D W; Kucza, J A

The infrared absorption of Si-rich SiO/sub 2/ films has been measured using the attenuated total reflection technique. Absorption lines attributed to SiOH, H/sub 2/O, and SiH groups have been observed in the as-deposited films. The concentrations of the SiOH and H/sub 2/O impurities were found to be in the low 10/sup 21/ cm/sup -3/ range, and the concentration of the SiH impurity was found to be 10/sup 18/ cm/sup -3/. Following a 1000 C anneal 10/sup 19/ cm/sup -3/ and 10/sup 16/ cm/sup -3/ ranges, respectively.

• Research Organization: IBM-Thomas J. Watson Research Center, Yorktown Heights, New York
• OSTI ID: 5270670
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 51:7; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ABSORPTION
ANNEALING
CHALCOGENIDES
DATA
DEPOSITION
ELECTROMAGNETIC RADIATION
ELEMENTS
EXPERIMENTAL DATA
FILMS
HEAT TREATMENTS
HYDRIDES
HYDROGEN COMPOUNDS
HYDROXIDES
INFORMATION
INFRARED RADIATION
NUMERICAL DATA
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
QUANTITY RATIO
RADIATIONS
REFLECTIVITY
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SILICON HYDROXIDES
SILICON OXIDES
SURFACE PROPERTIES
WATER