Heteroepitaxial Si/Si[sub 1[minus][ital x]]Ge[sub [ital x]]/Si structures produced using pulsed UV-laser processing

Journal Article · Mon Sep 26 04:00:00 EDT 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.112893· OSTI ID:7050990

Kramer, K; Talwar, S; Sigmon, T W ^[1]; Weiner, K H ^[2]

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1. Stanford Electronics Laboratories and Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
2. Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

High quality heteroepitaxial regrowth of arsenic-implanted [ital a]-Si on Si[sub 1[minus][ital x]]Ge[sub [ital x]] layers with Ge fractions between 0 and 0.2 is accomplished using pulsed laser induced epitaxy (PLIE). The structures of boron-doped Si[sub 1[minus][ital x]]Ge[sub [ital x]] on Si(100) are created beforehand using a combination of (PLIE) and gas immersion laser doping. A small amount of Ge and B backdiffusion from the Si[sub 1[minus][ital x]]Ge[sub [ital x]] film into the top Si layer is observed. During the laser pulse, the implanted arsenic diffuses up to the maximum melt depth so that melt depth and junction depth coincide. The [ital a]-Si is sputter deposited to a thickness of 900 A, and the As is implanted to a dose of 5[times]10[sup 14] cm[sup [minus]2] at 40 keV. A single XeCl excimer laser pulse with an energy fluence to be selected between 0.6 and 0.8 J/cm[sup 2] is sufficient to heteroepitaxially regrow the [ital a]-Si and activate the implanted arsenic.

• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 7050990
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:13; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ALLOYS
ARSENIC ADDITIONS
ARSENIC ALLOYS
BORON ADDITIONS
BORON ALLOYS
CRYSTAL DOPING
DIFFUSION
ELECTROMAGNETIC RADIATION
EPITAXY
GERMANIUM ALLOYS
MORPHOLOGY
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SILICON ALLOYS
ULTRAVIOLET RADIATION