Heteroepitaxial Si/Si[sub 1[minus][ital x]]Ge[sub [ital x]]/Si structures produced using pulsed UV-laser processing
- Stanford Electronics Laboratories and Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
- Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
High quality heteroepitaxial regrowth of arsenic-implanted [ital a]-Si on Si[sub 1[minus][ital x]]Ge[sub [ital x]] layers with Ge fractions between 0 and 0.2 is accomplished using pulsed laser induced epitaxy (PLIE). The structures of boron-doped Si[sub 1[minus][ital x]]Ge[sub [ital x]] on Si(100) are created beforehand using a combination of (PLIE) and gas immersion laser doping. A small amount of Ge and B backdiffusion from the Si[sub 1[minus][ital x]]Ge[sub [ital x]] film into the top Si layer is observed. During the laser pulse, the implanted arsenic diffuses up to the maximum melt depth so that melt depth and junction depth coincide. The [ital a]-Si is sputter deposited to a thickness of 900 A, and the As is implanted to a dose of 5[times]10[sup 14] cm[sup [minus]2] at 40 keV. A single XeCl excimer laser pulse with an energy fluence to be selected between 0.6 and 0.8 J/cm[sup 2] is sufficient to heteroepitaxially regrow the [ital a]-Si and activate the implanted arsenic.
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 7050990
- Journal Information:
- Applied Physics Letters; (United States), Vol. 65:13; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GERMANIUM ALLOYS
EPITAXY
SILICON ALLOYS
ARSENIC ADDITIONS
BORON ADDITIONS
CRYSTAL DOPING
DIFFUSION
MORPHOLOGY
PHYSICAL RADIATION EFFECTS
ULTRAVIOLET RADIATION
ALLOYS
ARSENIC ALLOYS
BORON ALLOYS
ELECTROMAGNETIC RADIATION
RADIATION EFFECTS
RADIATIONS
360601* - Other Materials- Preparation & Manufacture