Ion channeling analysis of a Si/sub 1/minus//ital x//Ge/sub /ital x//(As)/Si strained layer
Journal Article
·
· Appl. Phys. Lett.; (United States)
A strained layer of Si/sub 1/minus//ital x// Ge/sub /ital x// (As)/Si has been grown by molecular beam epitaxy (MBE) with the As dopant introduced by 1 keV ion implantation during growth. Analysis of the layer was made using secondary-ion mass spectrometry (SIMS), Rutherford backscattering (RBS), and proton-induced x-ray emission (PIXE)/channeling, using 2 MeV H/sup +/ ions. The layer thickness(/similar to/1.4 ..mu..m) and composition (/ital x//similar to/0.015; /ital n//sub As/ /similar to/6/times/10/sup 18/cm/sup /minus/3/) measurements by SIMS, RBS, and PIXE were in agreement. RBS,PIXE/channeling showed that the crystalline quality of the strained layer wasequivalent to that of the Si substrate. The substitutional fraction (/similar to/0.75) ofthe As dopant was determined by PIXE/channeling.
- Research Organization:
- Department of Physics, Brock University, St. Catharines, Ontario L2S 3A1, Canada(CA); University of Western Ontario, London, Ontario N6A 3K7, Canada; National Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada; Department of Energy, Mines and Resources, Ottawa, Ontario K1A 0G1, Canada
- OSTI ID:
- 6388155
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:25; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
MeV ion implantation induced damage in relaxed Si{sub 1{minus}x}Ge{sub x}
Growth, microstructure, and strain relaxation in low-temperature epitaxial Si{sub 1{minus}{ital x}}Ge{sub {ital x}} alloys deposited on Si(001) from hyperthermal beams
Au-mediated low-temperature solid phase epitaxial growth of a Si{sub {ital x}}Ge{sub 1{minus}{ital x}} alloy on Si(001)
Journal Article
·
Fri Feb 28 23:00:00 EST 1997
· Journal of Applied Physics
·
OSTI ID:467202
Growth, microstructure, and strain relaxation in low-temperature epitaxial Si{sub 1{minus}{ital x}}Ge{sub {ital x}} alloys deposited on Si(001) from hyperthermal beams
Journal Article
·
Mon Jul 01 00:00:00 EDT 1996
· Journal of Applied Physics
·
OSTI ID:285543
Au-mediated low-temperature solid phase epitaxial growth of a Si{sub {ital x}}Ge{sub 1{minus}{ital x}} alloy on Si(001)
Journal Article
·
Thu Feb 29 23:00:00 EST 1996
· Journal of Applied Physics
·
OSTI ID:283408
Related Subjects
656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
ARSENIC IONS
BACKSCATTERING
CATIONS
CHANNELING
CHARGED PARTICLES
DIMENSIONS
ELEMENTS
ENERGY RANGE
EPITAXY
GERMANIUM ALLOYS
HYDROGEN IONS
HYDROGEN IONS 1 PLUS
ION CHANNELING
ION IMPLANTATION
IONS
LAYERS
MASS SPECTROSCOPY
MEV RANGE
MEV RANGE 01-10
MOLECULAR BEAM EPITAXY
SCATTERING
SEMIMETALS
SILICON
SILICON ALLOYS
SPECTROSCOPY
THICKNESS
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
ARSENIC IONS
BACKSCATTERING
CATIONS
CHANNELING
CHARGED PARTICLES
DIMENSIONS
ELEMENTS
ENERGY RANGE
EPITAXY
GERMANIUM ALLOYS
HYDROGEN IONS
HYDROGEN IONS 1 PLUS
ION CHANNELING
ION IMPLANTATION
IONS
LAYERS
MASS SPECTROSCOPY
MEV RANGE
MEV RANGE 01-10
MOLECULAR BEAM EPITAXY
SCATTERING
SEMIMETALS
SILICON
SILICON ALLOYS
SPECTROSCOPY
THICKNESS