Formation of In sub x Ga sub 1 minus x As/GaAs heteroepitaxial layers using a pulsed laser driven rapid melt-solidification process

Journal Article · Mon May 07 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103065· OSTI ID:6815192

Chang, Y; Chou, S Y; Sigmon, T W ^[1]; Marshall, A F ^[2]; Weiner, K H ^[3]

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1. Solid State Laboratory, Stanford University, Stanford, CA (USA) Department of Electrical Engineering, Stanford University, Stanford, California 94305 (USA)
2. Center for Materials Research, Stanford University, Stanford, California 94305 (USA)
3. Lawrence Livermore National Laboratory, Livermore, California 94550 (USA)

Heteroepitaxial In{sub {ital x}}Ga{sub 1{minus}{ital x}}As/GaAs structures have been formed for the first time by pulsed laser induced mixing of molecular beam epitaxy deposited In films ({similar to}200 A) on GaAs (100) substrates. The process occurs by a melt-induced, rapid-mixing and solidification process driven by a XeCl pulsed excimer laser. The laser has a 27 ns full width at half maximum pulse width at 308 nm with its energy density of 0.28--0.61 J cm{sup {minus}2} homogenized into a 4{times}4 mm square area which is stepped across the wafer. In{sub {ital x}}Ga{sub 1{minus}{ital x}}As layers with {ital x} values, as determined by both x-ray diffraction and Rutherford backscattering spectrometry simulation ranging from {ital x}=0.21--0.26 and thicknesses of 77--94 nm, have been formed. The formation of single-crystal layers has been verified by {sup 4}He ion channeling and cross-section transmission electron microscopy.

• OSTI ID: 6815192
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:19; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360605 -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASER RADIATION
MELTING
MOLECULAR BEAM EPITAXY
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATIONS
RECRYSTALLIZATION