Depth dependence of ion implantation damage in Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As/GaAs heterostructures
- Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801 (United States)
- Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)
- Argonne National Laboratory, Argonne, Illinois 60439 (United States)
To determine the influence of interface type on the accumulation of damage and ion mixing in GaAs/Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As heterostructures, the damage produced by ion implantation at 77 K in single-layer (GaAs/Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As/GaAs) and double-layer (GaAs/Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As/GaAs/ Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As/GaAs) heterostructures has been investigated by using a combination of Rutherford backscattering spectrometry and transmission electron microscopy. In the single-layer geometry, the degree of disorder increases with depth and the mixing is greater at the Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As on GaAs interface than at the GaAs on Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As one. The damage distribution in the sample with the double-layer geometry was different in the two layers, but overall it was similar to that in the single-layer geometry. These trends were observed in samples with {ital x}=0.6 and 0.2. These results indicate that migration of charged defects due to the presence of an implantation-induced electric field is not responsible for the asymmetry in the damage accumulation across the layer, the interface disorder and ion mixing, and the initiation of amorphization at interfaces. Instead, these effects can be better understood in terms of the depth dependence of the density of cascade events. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- University of Illinois
- DOE Contract Number:
- FG02-91ER45439; W-31109-ENG-38
- OSTI ID:
- 389017
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 80; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ion damage production in GaAs/Al{sub 0.6}Ga{sub 0.4}As heterostructures
Si-implanted and disordered stripe-geometry Al/sub x/Ga/sub 1-x/As-GaAs quantum well lasers