Ion damage production in GaAs/Al{sub 0.6}Ga{sub 0.4}As heterostructures
- Univ. of Illinois, Urbana, IL (United States)
- Argonne National Lab., IL (United States)
The non-uniform distribution of damage with depth and the onset of amorphization produced in Al{sub 0.6}Ga{sub 0.4}As/GaAs heterostructures by 1.5 MeV Kr{sup +} ion implantation at 77K have been investigated by using a combination of RBS (Rutherford Backscattering) channeling and cross-sectional high-resolution TEM techniques. The extent of damage increase with increasing depth in the Al{sub 0.6}Ga{sub 0.4}As layer. This depth dependence of the damage can be correlated with an increase in the number of recoil events with an energy between 30 and 50 KeV. The authors propose that the amorphization of Al{sub 0.6}Ga{sub 0.4}As requires the superposition of cascade-type damage on a background population of point defects which is created by implantation with high energy ions.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL
- DOE Contract Number:
- FG02-91ER45439; W-31109-ENG-38
- OSTI ID:
- 99464
- Report Number(s):
- CONF-941144--; ISBN 1-55899-275-8
- Country of Publication:
- United States
- Language:
- English
Similar Records
On the amorphization process in Al{sub 0.6}Ga{sub 0.4}As/GaAs heterostructures
Depth dependence of ion implantation damage in Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As/GaAs heterostructures