Ion damage studies in GaAs/Al{sub 0.6}Ga{sub 0.4}As/GaAs heterostructures
- Illinois Univ., Urbana, IL (United States)
- Argonne National Lab., IL (United States)
Development of damage structure produced in (100) GaAs/Al{sub 0.6}Ga{sub 0.4}As/GaAs by 1 MeV Kr{sup +} ion irradiation at 77 and 293 K was investigated by RBS channeling and cross-sectional high-resolution TEM techniques. Following an implantation to a dose of 10{sup 14} ions CM{sup {minus}2} at 77 K, RBS channeling spectra indicate that the Al{sub 0.6}Ga{sub 0.4}AS layer contained a high defect density and was possibly amorphous. Warming to room temperature resulted in a change in the channeling spectrum, which indicated that the damage in the Al{sub 0.6}Ga{sub 0.4}As layer had partially recovered. The degree of recovery was greatest at the GaAs/Al{sub 0.6}Ga{sub 0.4}As interface, and decreased with increasing depth. TEM observations show the damage in the Al{sub 0.6}Ga{sub 0.4}As to be comprised of planar defects, the density of which increases with depth, and an amorphous layer at the bottom interface. This difference in the damage distribution is consistent with the asymmetry in the channeling spectrum. A model based on the depth variation of cascade density is proposed to account for the observations.
- Research Organization:
- Argonne National Lab., IL (United States); Illinois Univ., Urbana, IL (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
- DOE Contract Number:
- FG02-91ER45439; W-31109-ENG-38
- OSTI ID:
- 10115885
- Report Number(s):
- ANL/MSD/CP--80260; CONF-931108--42; ON: DE94005384; BR: KC0201010/KC0201020; CNN: Contract DMR 89-20538
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
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42 ENGINEERING
426000
440200
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM ARSENIDES
COMPONENTS
ELECTRON DEVICES AND CIRCUITS
DAMAGE
DEPTH
GALLIUM ARSENIDES
HETEROJUNCTIONS
INTERFACES
ION BEAMS
LAYERS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION EFFECTS ON INSTRUMENT COMPONENTS
INSTRUMENTS
OR ELECTRONIC SYSTEMS