Si-implanted and disordered stripe-geometry Al/sub x/Ga/sub 1-x/As-GaAs quantum well lasers
Journal Article
·
· Appl. Phys. Lett.; (United States)
The Si impurity is implanted into an Al/sub x/Ga/sub 1-x/ As-GaAs quantum well heterostructure to form, by impurity-induced layer disordering and donor doping, a stripe-geometry buried heterostructure laser.
- Research Organization:
- Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801
- OSTI ID:
- 5271937
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 47:9; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:6219846
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OSTI ID:6355944
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Mon Sep 01 00:00:00 EDT 1986
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OSTI ID:5501085
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
CRYSTAL DOPING
ELEMENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
IMPURITIES
ION IMPLANTATION
IONS
JUNCTIONS
LASERS
LAYERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
SILICON IONS
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
CRYSTAL DOPING
ELEMENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
IMPURITIES
ION IMPLANTATION
IONS
JUNCTIONS
LASERS
LAYERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
SILICON IONS