Stripe-geometry quantum well heterostructure Al/sub x-italic/Ga/sub 1-//sub x-italic/As-GaAs lasers defined by defect diffusion
Journal Article
·
· Appl. Phys. Lett.; (United States)
Impurity-free selective layer disordering, utilizing Si/sub 3/N/sub 4/ masking stripes and SiO/sub 2/ defect (vacancy) sources, is used to realize room-temperature continuous Al/sub x-italic/Ga/sub 1-//sub x-italic/As-GaAs quantum well heterostructure lasers.
- Research Organization:
- Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801
- OSTI ID:
- 5501085
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:9; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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OSTI ID:5914942
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ATOM TRANSPORT
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFUSION
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASERS
MINERALS
NEUTRAL-PARTICLE TRANSPORT
NITRIDES
NITROGEN COMPOUNDS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
POINT DEFECTS
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SILICA
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES
VACANCIES
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ATOM TRANSPORT
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFUSION
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASERS
MINERALS
NEUTRAL-PARTICLE TRANSPORT
NITRIDES
NITROGEN COMPOUNDS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
POINT DEFECTS
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SILICA
SILICON COMPOUNDS
SILICON NITRIDES
SILICON OXIDES
VACANCIES