Stripe-geometry Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well lasers via hydrogenation

Journal Article · Mon Nov 16 04:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98577· OSTI ID:5914942

Jackson, G S; Pan, N; Feng, M S; Stillman, G E; Jr, Holonyak N; Burnham, R D

Data are presented on stripe-geometry gain-guided Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well heterostructure lasers fabricated via masked (SiO/sub 2/) hydrogen compensation (''hydrogenation'') of the Mg and Se dopants in the multiple layer heterostructure. Continuous room-temperature laser operation is achieved with a threshold current of 24 mA and 24 mW total output at 50 mA. Near-field emission patterns show strong current confinement in the stripe-active region, and significant hydrogenation ''undercutting'' of the oxide mask.

• Research Organization: Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801
• OSTI ID: 5914942
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:20; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALKALINE EARTH METALS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL REACTIONS
CRYSTAL DOPING
CURRENTS
DATA
ELECTRIC CURRENTS
ELEMENTS
EMISSION
EXPERIMENTAL DATA
FABRICATION
FIELD EMISSION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
HYDROGENATION
INFORMATION
JUNCTIONS
LASERS
MAGNESIUM
METALS
MINERALS
NUMERICAL DATA
OPERATION
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PERFORMANCE
PNICTIDES
POWER
SELENIUM
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICA
SILICON COMPOUNDS
SILICON OXIDES
THRESHOLD CURRENT