Carbon-doped Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well lasers

Journal Article · Mon Feb 15 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99403· OSTI ID:5733947

Guido, L J; Jackson, G S; Hall, D C; Plano, W E; Jr, Holonyak N

Data are presented demonstrating that carbon (C) can be used as the active p-type dopant in high-quality Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well laser crystals. We show, by fabricating three different types of stripe geometry laser diodes (oxide stripe, hydrogenated stripe, and impurity-induced layer-disordered stripe), that C is a stable dopant and compatible in behavior with typical integrated-circuit style of device processing. The data suggest that more complicated laser geometries are possible on C-doped material because of minimal pattern ''undercutting'' after processing by, for example, hydrogenation or impurity-induced layer disordering.

• Research Organization: Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801
• OSTI ID: 5733947
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARBON
CRYSTAL DOPING
CURRENTS
DATA
ELECTRIC CURRENTS
ELEMENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
IMPURITIES
INFORMATION
JUNCTIONS
LASERS
NONMETALS
NUMERICAL DATA
OPERATION
PERFORMANCE
PNICTIDES
POWER
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS