Stripe-geometry Al/sub x/Ga/sub 1-x/As-GaAs quantum well heterostructure lasers defined by Si diffusion and disordering

Journal Article · Tue Jan 01 04:00:00 EST 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95859· OSTI ID:6219846

Meehan, K; Gavrilovic, P; Jr, Holonyak N; Burnham, R D; Thornton, R L

The use of Si diffusion and impurity-induced layer disordering, via a Si/sub 3/N/sub 4/ mask pattern, to construct stripe-geometry Al/sub x/Ga/sub 1-x/As-GaAs quantum well heterostructure lasers on n-type substrates is described. This leads to a convenient form of index-guided buried-heterostructure laser that is easily constructed and replicated (in various geometries) on commonly available n-type GaAs substrate.

• Research Organization: Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801
• OSTI ID: 6219846
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DIFFUSION
ELEMENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
MASKING
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES