Disorder-defined buried-heterostructure Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well lasers by diffusion of silicon and oxygen from Al-reduced SiO/sub 2/

Journal Article · Sun Mar 26 23:00:00 EST 1989 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.100734· OSTI ID:6355944

Guido, L J; Major, Jr, J S; Baker, J E; Jr, Holonyak N; Burnham, R D

We describe a convenient method utilizing chemical reduction of SiO/sub 2/ by Al (from Al/sub x/Ga/sub 1-//sub x/As) to generate Si and O for impurity-induced layer disordering (IILD) of Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well heterostructures (QWHs). Experimental data show that Si-O diffusion (from SiO/sub 2/) is an effective source of Si for Si-IILD and of O that compensates the Si donor, thus resulting in higher resistivity layer-disordered crystal. The usefulness of the Si-O IILD source for fabricating low-threshold disorder-defined buried-heterostructure Al/sub x/Ga/sub 1-//sub x/As-GaAs QWH lasers is demonstrated.

• Research Organization: Electrical Engineering Research Laboratory, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois at Urbana--Champaign, Urbana, Illinois 61801
• OSTI ID: 6355944
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:13; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ATOM TRANSPORT
CHALCOGENIDES
DIFFUSION
ELEMENTS
ENERGY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
IMPURITIES
JUNCTIONS
LASERS
MINERALS
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
OXIDE MINERALS
OXIDES
OXYGEN
OXYGEN COMPOUNDS
PNICTIDES
RADIATION TRANSPORT
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
THRESHOLD ENERGY