High-barrier cluster-free Al/sub x/Ga/sub 1-x/As-AlAs-GaAs quantum-well heterostructure laser

Journal Article · Thu Jan 15 04:00:00 EST 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92261· OSTI ID:7067021

Coleman, J J; Dapkus, P D; Laidig, W D; Vojak, B A; Holonyak, N Jr

Laser data (77 and 300 K) are presented on an Al/sub x/Ga/sub 1-x/As-AlAs-GaAs quantum-well heterostructure (QWH) grown by metalorganic-chemical vapor deposition with an active region consisting of 13 AlAs barrier layers of size L/sub B/approx.10 A and 12 GaAs quantum wells of size L/sub z/approx.50 A. This QWH, which is free of alloy disorder and clustering (Al-Ga clusters) in the active region, emits on the confined particle transitions and not at the lower energies characteristic of QWH's with Al/sub x/Ga/sub 1-x/As barrier layers (and Al-Ga clusters).

• Research Organization: Rockwell International, Electronics Research Center, Anaheim, California 92803
• OSTI ID: 7067021
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALLOYS
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIMENSIONS
ENERGY-LEVEL TRANSITIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LAYERS
LOW TEMPERATURE
MEDIUM TEMPERATURE
PNICTIDES
POTENTIALS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE COATING
THICKNESS