Low-temperature operation of multiple quantum-well Al/sub x/Ga/sub 1-x/As-GaAs p-n heterostructure lasers grown by metalorganic chemical vapor deposition. [4. 2 to 77/sup 0/K]

Journal Article · Sat Sep 01 04:00:00 EDT 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.326729· OSTI ID:6102561

Vojak, B A; Kirchoefer, S W; Holonyak, N Jr; Chin, R; Dupuis, R D; Dapkus, P D

The phonon-assisted laser operation (4.2--77 /sup 0/K) of multiple quantum-well Al/sub x/Ga/sub 1-x/As-GaAs heterostructure diodes is described. Laser operation is observed on phonon sidebands approx.36 meV below the lowest confined-particle transitions. Tunnel injection into the confined-particle states, with light emission and negative-resistance regions, is also observed in these multiple quantum-well heterostructures. Two different multiple quantum-well heterostructures grown by metalorganic chemical vapor deposition are described. The first consists of six GaAs quantum wells (L/sub z/approx.120 A) coupled by five Al/sub x/Ga/sub 1-x/As (xapprox.0.3) layers (approx.120 A), and the second is similar except for a reduction in layer size to approx.50 A.

• Research Organization: Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 6102561
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
DEPOSITION
ELEMENTS
EMISSION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LOW TEMPERATURE
METALS
OPERATION
PARTICLES
PHONONS
PNICTIDES
QUASI PARTICLES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SURFACE COATING
ULTRALOW TEMPERATURE
VERY LOW TEMPERATURE