Low-temperature operation of multiple quantum-well Al/sub x/Ga/sub 1-x/As-GaAs p-n heterostructure lasers grown by metalorganic chemical vapor deposition. [4. 2 to 77/sup 0/K]
The phonon-assisted laser operation (4.2--77 /sup 0/K) of multiple quantum-well Al/sub x/Ga/sub 1-x/As-GaAs heterostructure diodes is described. Laser operation is observed on phonon sidebands approx.36 meV below the lowest confined-particle transitions. Tunnel injection into the confined-particle states, with light emission and negative-resistance regions, is also observed in these multiple quantum-well heterostructures. Two different multiple quantum-well heterostructures grown by metalorganic chemical vapor deposition are described. The first consists of six GaAs quantum wells (L/sub z/approx.120 A) coupled by five Al/sub x/Ga/sub 1-x/As (xapprox.0.3) layers (approx.120 A), and the second is similar except for a reduction in layer size to approx.50 A.
- Research Organization:
- Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- OSTI ID:
- 6102561
- Journal Information:
- J. Appl. Phys.; (United States), Vol. 50:9
- Country of Publication:
- United States
- Language:
- English
Similar Records
Phonon-sideband MO-CVD quantum-well Al/sub x/Ga/sub 1-x/As-GaAs heterostructure laser
Bandfilling in metalorganic chemical vapor deposited Al/sub x/Ga/sub 1-x/As-GaAs-Al/sub x/Ga/sub 1-x/As quantum-well heterostructure lasers
Related Subjects
36 MATERIALS SCIENCE
GALLIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
SEMICONDUCTOR LASERS
OPERATION
ALUMINIUM
CRYSTAL STRUCTURE
EMISSION
LOW TEMPERATURE
PARTICLES
PHONONS
SEMICONDUCTOR DIODES
ULTRALOW TEMPERATURE
VERY LOW TEMPERATURE
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
DEPOSITION
ELEMENTS
GALLIUM COMPOUNDS
LASERS
METALS
PNICTIDES
QUASI PARTICLES
SEMICONDUCTOR DEVICES
SURFACE COATING
420300* - Engineering- Lasers- (-1989)
360601 - Other Materials- Preparation & Manufacture