Tunnel injection and phonon-assisted recombination in multiple quantum-well Al/sub x/Ga/sub 1-x/As-GaAs p-n heterostructure lasers grown by metalorganic chemical vapor deposition

Journal Article · Sat Sep 01 04:00:00 EDT 1979 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.326730· OSTI ID:6258510

Vojak, B A; Holonyak, N Jr; Chin, R; Rezek, E A; Dupuis, R D; Dapkus, P D

Stripe-geometry multiple quantum-well Al/sub x/Ga/sub 1-x/As-GaAs heterostructure laser diodes are described that exhibit tunnel injection with LO phonon participation in the injection and the recombination process. The diodes are constructed by Zn diffusion into n-type Al/sub x/Ga/sub 1-x/As-GaAs heterostructures grown by metalorganic chemical vapor deposition (MO-CVD). At bias voltages V< (1/q) E/sub g/(AlGaAs) in which tunneling is important, laser operation (4.2--77 /sup 0/K) of these quantum-well diodes is obtained an LO phonon energy (approx.36 meV) below the first electron--to--heavy-hole (No. 1 e..-->..hh) confined-particle transitions of the coupled GaAs quantum wells (six wells, L/sub z/approx.120 A). In the normal injection bias range Vapprox. (1/q) E/sub g/(AlGaAs), recombination radiation is identified on the No. 2 e..-->..hh transitions and an LO phonon energy below the second electron-to-light-hole (No. 2' e..-->..lh) confined-particle transitions. Phonon involvement in the recombination process is identified also in the range between confined-particle transition 1-1' and 2.

• Research Organization: Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 6258510
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:9; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation &amp; Manufacture
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL STRUCTURE
DEPOSITION
DIFFUSION
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTIONS
LASERS
LOW TEMPERATURE
METALS
OPERATION
P-N JUNCTIONS
PHONONS
PNICTIDES
QUASI PARTICLES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE COATING
TUNNEL EFFECT
ULTRALOW TEMPERATURE
VERY LOW TEMPERATURE