Low-threshold continuous laser operation (300--337 /sup 0/K) of multilayer MO-CVD Al/sub x/Ga/sub 1-x/As-GaAs quantum-well heterostructures

Journal Article · Sun Oct 15 00:00:00 EDT 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90522· OSTI ID:6650037

Holonyak, N Jr; Kolbas, R M; Laidig, W D; Vojak, B A; Dupuis, R D; Dapkus, P D

Data are presented on multilayer Al/sub x/Ga/sub 1-x/As-GaAs quantum-well heterostructures showing that cw 300--337 /sup 0/K laser operation is possible at photoexcitation threshold levels (< or approx. =1.2 x 10/sup 3/ W/cm/sup 2/, J/sub th/< or approx. =500 A/cm/sup 2/) comparable to better LPE double heterojunctions and much lower than all previous single or multiple quantum-well heterostructures. These quantum-well heterostructures are grown by metalorganic chemical vapor deposition (MO-CVD) and consist of four 80--90-A GaAs active layers coupled by three 80--90-A Al/sub x/Ga/sub 1-x/As (xapprox.0.35) barriers, all of which are sandwiched between 1- and 0.3-..mu..m Al/sub x/Ga/sub 1-x/As (xapprox.0.40) confining layers.

• Research Organization: Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 6650037
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 33:8
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
PERFORMANCE
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
EMISSION SPECTRA
EXCITATION
GALLIUM ARSENIDES
JUNCTION DIODES
LAYERS
OPERATION
OPTICAL PUMPING
THRESHOLD ENERGY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
DEPOSITION
ENERGY
ENERGY-LEVEL TRANSITIONS
GALLIUM COMPOUNDS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SPECTRA
SURFACE COATING
420300* - Engineering- Lasers- (-1989)