Low-threshold continuous laser operation (300--337 /sup 0/K) of multilayer MO-CVD Al/sub x/Ga/sub 1-x/As-GaAs quantum-well heterostructures

Journal Article · Sun Oct 15 04:00:00 EDT 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90522· OSTI ID:6650037

Holonyak, N Jr; Kolbas, R M; Laidig, W D; Vojak, B A; Dupuis, R D; Dapkus, P D

Data are presented on multilayer Al/sub x/Ga/sub 1-x/As-GaAs quantum-well heterostructures showing that cw 300--337 /sup 0/K laser operation is possible at photoexcitation threshold levels (< or approx. =1.2 x 10/sup 3/ W/cm/sup 2/, J/sub th/< or approx. =500 A/cm/sup 2/) comparable to better LPE double heterojunctions and much lower than all previous single or multiple quantum-well heterostructures. These quantum-well heterostructures are grown by metalorganic chemical vapor deposition (MO-CVD) and consist of four 80--90-A GaAs active layers coupled by three 80--90-A Al/sub x/Ga/sub 1-x/As (xapprox.0.35) barriers, all of which are sandwiched between 1- and 0.3-..mu..m Al/sub x/Ga/sub 1-x/As (xapprox.0.40) confining layers.

• Research Organization: Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 6650037
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
EMISSION SPECTRA
ENERGY
ENERGY-LEVEL TRANSITIONS
EXCITATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTION DIODES
LASERS
LAYERS
OPERATION
OPTICAL PUMPING
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SPECTRA
SURFACE COATING
THRESHOLD ENERGY