Photopumped laser operation of MO-CVD Al/sub x/Ga/sub 1-x/As near a GaAs quantum well (lambda> or approx. =6200 A, 77 /sup 0/K)

Journal Article · Sun Oct 01 00:00:00 EDT 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90473· OSTI ID:6729538

Dupuis, R D; Dapkus, P D; Kolbas, R; Holonyak, N Jr; Shichijo, H

Data are presented showing that Al/sub x/Ga/sub 1-x/As (xapprox.0.42) grown by metalorganic chemical vapor deposition (MO-CVD) will operate as a photopumped laser to wavelengths as short as approx.6200 A (77 /sup 0/K). From the different spectral behavior of two separately photopumped epitaxial Al/sub x/Ga/sub 1-x/As (xapprox.0.36) confining layers (1 and 0.3 ..mu..m thick) with an 80-A (and a comparison 200-A) GaAs quantum-well center layer, the recombination of hot electrons with holes collected in the quantum layer is used to estimate ..delta..E/sub v/.

• Research Organization: Rockwell International, Electronic Devices Division, Electronics Research Center, Anaheim, California 92803
• OSTI ID: 6729538
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM
ARSENIC
COATINGS
ELEMENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
GALLIUM
LASERS
METALS
OPTICAL PUMPING
SEMIMETALS
STIMULATED EMISSION
VAPOR DEPOSITED COATINGS