Room-temperature continuous operation of photopumped MO-CVD Al/sub x/Ga/sub 1-x/As-GaAs-Al/sub x/Ga/sub 1-x/As quantum-well lasers

Journal Article · Sat Jul 01 00:00:00 EDT 1978 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90150· OSTI ID:6847187

Holonyak, N Jr; Kolbas, R M; Dupuis, R D; Dapkus, P D

Room-temperature continuous operation (cw, 300 /sup 0/K) of photopumped Al/sub x/Ga/sub 1-x/As-GaAs-Al/sub x/Ga/sub 1-x/As quantum-well heterostructure lasers embedded in Cu under diamond windows is demonstrated. The quantum-well heterostructures are grown by metalorganic chemical vapor deposition (MO-CVD) and possess undoped (n/sub d/-n/sub a/< or approx. =10/sup 1/5/cm/sup 3/) or compensated (n/sub Zn/approx.10/sup 1/9/cm/sup 3/, n/sub Se/approx.8 x 10/sup 1/8/cm/sup 3/) GaAs active layers of thickness L/sub z/approx.200 A.

• Research Organization: Department of Electrical Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 6847187
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 33:1; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTION DIODES
LASERS
OPERATION
OPTICAL MODES
OPTICAL PUMPING
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
OSCILLATION MODES
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SURFACE COATING