Continuous room-temperature photopumped laser operation of modulation-doped Al/sub x/Ga/sub 1-x/ As/GaAs superlattices
The low-threshold continuous room-temperature laser operation of a photopumped metalorganic chemical vapor deposition Al/sub x/Ga/sub 1-x/ As-GaAs superlattice is described. The superlattice, a bare superlattice without cladding or confining layers, consists of 25 140-A Al/sub x/Ga/sub 1-x/ As (xapprox.0.3) coupling barriers doped to a level n/sub d/ approx.7 x 10/sup 17//cm/sup 3/ and 25 alternating undoped 140-A GaAs quantum wells. Low-temperature data (77 K) are presented indicating that the threshold for phonon-assisted recombination occurs near the excitation level at which the excess carrier density approaches the built-in carrier density approx.7 x 10/sup 17//cm/sup 3/ of the superlattice.
- Research Organization:
- Rockwell International, Electronics Research Center, Anaheim, California 92803
- OSTI ID:
- 6643482
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:3; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CHALCOGENIDES
CHARGE CARRIERS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIMENSIONS
DOPED MATERIALS
ELEMENTS
ENERGY-LEVEL TRANSITIONS
EXCITATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LAYERS
LOW TEMPERATURE
MATERIALS
MEDIUM TEMPERATURE
METALS
MODULATION
OPTICAL PUMPING
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
PUMPING
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SUPERLATTICES
SURFACE COATING
THICKNESS