High pressure measurements on photopumped low threshold Al/sub x/Ga/sub 1-x/As quantum well lasers
Data are presented on the continuous (cw) 300 K photopumped laser operation of a low threshold Al/sub x/'Ga/sub 1-x/'As--GaAs (x'approx.0.30) single quantum well heterostructure (quantum well size L/sub z/approx.60 A) subjected to high pressure (0--11 kbar) in a simple opposed anvil apparatus. Beyond approx.11 kbar where the central Al/sub x/'Ga/sub 1-x/'As waveguide region undergoes a direct--indirect transition, and the waveguide confinement begins to weaken and deep levels tend to become important, the laser threshold increases rapidly and ''quenches'' cw 300 K operation. Pulsed 300 K photopumped laser operation of an undoped 121-period Al/sub x/Ga/sub 1-x/As--GaAs (xapprox.0.5) superlattice in the pressure range from 0--11 kbar is shown for reference. The pressure coefficients of the quantum well heterostructure and the superlattice lasers are comparable (approx.11 meV/kbar).
- Research Organization:
- Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- DOE Contract Number:
- AC02-76ER01198
- OSTI ID:
- 5853777
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 54:8; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONFINEMENT
ENERGY LEVELS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASERS
MEDIUM TEMPERATURE
OPTICAL PUMPING
PNICTIDES
PRESSURE DEPENDENCE
PUMPING
SCINTILLATION QUENCHING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SUPERLATTICES
VERY HIGH PRESSURE
WAVEGUIDES